*j..i\.u ^zmi-donductoi {/ u 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irf140-143/IRF540-543 n-channel power mosfets, 27 a, 60-100 v power and discrete division description these devices are n-channel, enhancement mode, power mosfets designed especially for high power, high speed applications, such as switching power supplies, ups, ac and dc motor controls, relay and solenoid drivers and high energy pulse circuits. low boston) vgs rated at 20 v silicon gate for fast switching speeds idss. vos(on), specified at elevated temperature rugged low drive requirements ease of paralleling product summary to-204ae to-220ab irfs40 irf541 irf542 irf543 part number irf140 irf141 irf142 irf143 IRF540 irf541 irf542 irf543 vdss 100 v 60 v 100 v 60 v 100 v 60 v 100 v 60 v rds (on) 0.085 j2 0.085 n 0.11 n 0.11 n 0.085 n o.o85 n 0.11 n 0.11 n id at tcsas'c 27 a 27 a 24 a 24 a 27 a 27 a 24 a 24 a id at tc = 100'c 17 a 17 a 15 a 15 a 17 a 17 a 15 a 15 a case style to-204ae to-220ab nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf140-143/IRF540-543 maximum ratings symbol vdss voqr vgs tj. tstg tl characteristic drain to source voltage1 drain to gate voltage1 rqs - 20 k? gate to source voltage operating junction and storage temperatures maximum lead temperature (or soldering purposes, 1/8" from case for 5 $ rating irf140/142 irfs40/542 100 100 20 -55 to +15c 275 rating irf141/143 irf641/s43 60 60 20 -55 to +150 275 unit v v v c ?c maximum thermal characteristics rftjc pd idm thermal resistance, junction to case total power dissipation at tc-^s-c pulsed drain current2 irf140-143 1.0 125 108 IRF540-543 1.0 125 108 c/w w a electrical characteristics (tc = 25c unless otherwise noted) symbol characteristic mln max unit test conditions off characteristics v(br)dss loss igss drain source breakdown voltage1 irf140/142/540/542 irf141/143/541/543 zero gate voltage drain current gate-body leakage current irf140-143 IRF540-s43 100 60 250 1000 100 500 v j"a ha na vqs-o v, id = 250 m vds- rated vdss, vqs-=0 v vds - 0.8 x rated vdss. vqs = o v, tc-iss'c vqs- 20 v, voa-0 v on characteristics vgs(lh) r[3s(on) gis gate threshold voltage static drain-source on-resistance2 irf140/141/540/541 irf142/143/542/543 forward transconductance 2.0 r 6.0 4.0 0.085 0.11 v ft s rj) id => 250 aia, vds " vqs vgs-10 v, id = 15 a vds -10 v, b -15 a
irf140-143/IRF540-543 electrical characteristics (cont.) (tc = 25c unless otherwise noted) symbol characteristic min max unit test conditions dynamic characteristics cjss com crss input capacitance output capacitance reverse transfer capacitance 1600 600 300 pf pf pf vds - 25 v, vgs - 0 v f-1.0 mhz switching characteristics (tc = 25c, figures 1, 2,)3 tdlon) t, td(otf) tf ld(on) tr *d(otf) ?f qq turn-on delay time rise time turn-oft delay time fall time turn-on delay time rise time turn-off delay time fall time total gate charge 30 60 80 30 60 450 150 200 60 ns ns ns ns ns ns ns ns nc vdd = 45 v. b -15 a vqs -10 v, rgen-4.7 s7 rqs - 4.7 li vdd-25 v, id -15 a vqs-io v, rqen-so n ros-50 n vgs -10 v, id -34 a vdd = 35 v symbol characteristic typ max unit test conditions source-drain diode characteristics vsd v diode forward voltage irf140/141/540/541 irf142/143/542/543 reverse recovery time 2.0 2.0 300 2.5 2.3 v v ns ls - 27 a; vqs - 0 v ls - 24 a; vqs - 0 v ls = 4.0 a; dls/dt - 25 a/?is notu 1. tj- -i-25'c to +1bo'c 2. pulse widlh limited by tj 3. switching time measurements performed on lem tr-58 test equipment
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